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Access Contact JP About IMROrganizationResearchCollaborationsEducation / Graduate SchoolPublic Relations / Open Facility About IMRDirector’s GreetingPrinciple and MissionHistorySuccessive DirectorsOrganization MapPersonnel / BudgetResearch Divisions and CentersLocation(Access)Honors and AwardsInternational CollaborationsGender Equality Promotion OrganizationResearchersLaboratories(Research Divisions)Research Facilities and Collaboration Research CentersService Divisions Organization MapCommittee ResearchRecent Research Activities [Press release]Representative Inventions/DevelopmentsResearch AchievementsResearch areasKINKEN Research Highlights(PR Magazins) CollaborationsAcademic Research Collaboration(GIMRT)GIMRT WebsiteGIMRT Application WebsiteIndustry-Academia CooperationInstruments Sharing System(Japanese text only)KINKEN Summer SchoolInternational Exchange(ICC-IMR Website) Education / Graduate SchoolGraduate SchoolsCollaborative coursesOverseas MembersAwards(students)Campus LifeFinancial Support Public Relations / Open FacilityEventsPublic Relations magazinesDigital Archive Honda Memorial HallIMR Library Website NewsNewsResearchAwardsNewsReportsInformationOpen Position HOME en News Research Downscaling Storage Devices: Magnetic Memory Based on the Chirality of Spiral Magnets Research JP Downscaling Storage Devices: Magnetic Memory Based on the Chirality of Spiral Magnets 2024/03/08 A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, non-volatility, and high durability. Details of their findings were published in the journal Nature Communications on March 7, 2024. Spintronic devices, represented by magnetic random access memory (MRAM), utilize the magnetization direction of ferromagnetic materials to memorize information. Because of their non-volatility and low energy consumption, spintronic devices will likely play a pivotal role in future information storage components. However, ferromagnet-based spintronics devices have a potential pitfall. Ferromagnets generate magnetic fields around them, which affect nearby ferromagnets. In an integrated magnetic device, this results in crosstalk between magnetic bits, which will limit the magnetic memory density. The research team, which comprised Hidetoshi Masuda, Takeshi Seki, Yoshinori Onose and others from Tohoku University&＃39;s Institute for Materials Research, and Jun-ichiro Ohe from Toho University, demonstrated that magnetic materials called helical magnets can be utilized for a magnetic memory device, which should resolve the magnetic field problem. In helical magnets, the directions of the atomic magnetic moments are ordered in a spiral. The right- or left-handedness of the spiral, called chirality, could be utilized to memorize the information. The magnetic fields induced by each atomic magnetic moment cancel each other out, so the helical magnets do not generate any macroscopic magnetic field. "The memory devices based on the handedness of the helimagnets, free from the crosstalk among bits, could pave a new pathway for improving the memory density", says Masuda. Concept of the helimagnet-based memory devices. The directions of the atomic magnetic moments, depicted by the colored allows, are arranged into a spiral. Chirality, the right- and left-handed rotation direction of the spiral, is utilized to memorize information. ©Masuda et. al.   The research team demonstrated that the chirality memory can be written and read out at room temperature. They fabricated epitaxial thin films of a room-temperature helimagnet MnAu2 and demonstrated the switching of chirality (right- and left-handedness of the spiral) by the electric current pulses under magnetic fields. Furthermore, they fabricated a bilayer device composed of MnAu2 and Pt (platinum) and demonstrated that the chirality memory can be read out as a resistance change, even without magnetic fields. "We have uncovered the potential capability of chirality memory in helical magnets for next-generation memory devices; it may offer high-density, non-volatile, and highly stable memory bits", adds Masuda. "This will hopefully lead to future storage devices with ultrahigh information density and high reliability." (2024/3/25 updated) Publication Details Title Room temperature chirality switching and detection in a helimagnetic MnAu₂ thin film Authors Hidetoshi Masuda*, Takeshi Seki*, Jun-ichiro Ohe, Yoichi Nii, Hiroto Masuda, Koki Takanashi, Yoshinori Onose* Journal Nature Communications DOI 10.1038/s41467-024-46326-4 Online publication date March 7, 2024 Press release online (in Japanese) PDF:  670KB Quantum Functional Materials Physics Research Laboratory Next Previous NewsNewsNews2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003Research2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998Awards2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003News2020 2019 2018Reports2024 2018 2017Information2022 2021 2020 2019 2018 2017Open Position2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2013 Sitemap 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